Photodetectors formed by an indium tin oxide/zinc oxide/p-type gallium nitride heterojunction with high ultraviolet-to-visible rejection ratio
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3064130
Reference15 articles.
1. Improvement of near-ultraviolet nitride-based light emitting diodes with mesh indium tin oxide contact layers
2. Ultraviolet band-pass photodetectors formed by Ga-doped ZnO contacts to n-GaN
3. Schottky barrier heights of metal contacts to n-type gallium nitride with low-temperature-grown cap layer
4. Electrical and chemical characterization of the Schottky barrier formed between clean n-GaN(0001) surfaces and Pt, Au, and Ag
5. Effects of thermal annealing on the indium tin oxide Schottky contacts of n-GaN
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