Green’s function approach for transport calculation in a In0.53Ga0.47As/In0.52Al0.48As modulation-doped heterostructure
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1555279
Reference14 articles.
1. Electron mobilities in modulation‐doped semiconductor heterojunction superlattices
2. Influence of an undoped (AlGa)As spacer on mobility enhancement in GaAs‐(AlGa)As superlattices
3. Temperature dependence of the electron mobility in GaAs‐GaAlAs heterostructures
4. Electron mobilities in modulation-doped GaAs-(AlGa)As heterostructures
5. Low temperature two-dimensional mobility of a GaAs heterolayer
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1. Mobility in gated GaNxAs1−xheterostructures as a probe of nitrogen-related electronic states;Physical Review B;2011-10-31
2. Band Structure Dependence of Electron Mobility in Modulation-Doped Lattice-Matched InAlAs/InGaAs/InAlAs Heterostructures;Japanese Journal of Applied Physics;2010-08-20
3. Separating the Contribution of Mobility among Different Quantum Well Subbands;Japanese Journal of Applied Physics;2010-01-20
4. Limitation of electron mobility in modulation-doped In0.53Ga0.47As/InP quantum wells at low temperatures;Brazilian Journal of Physics;2006-06
5. Variational results for electron mobility in modulation-doped In0.53Ga0.47As/InP single symmetric quantum wells;Microelectronics Journal;2005-11
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