Temperature dependence of the electron mobility in GaAs‐GaAlAs heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95178
Reference15 articles.
1. Improved Electron Mobility Higher than 106cm2/Vs in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE
2. Temperature dependence of the mobility of two‐dimensional hole systems in modulation‐doped GaAs‐(AlGa)As
3. High mobility electron gas in selectively doped n:AlGaAs/GaAs heterojunctions
4. Self-Consistent Results for a GaAs/AlxGa1-xAs Heterojunciton. II. Low Temperature Mobility
5. Impurity and phonon scattering in layered structures
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