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Electrical domain writing and nanoscale potential modulation on LaVO3/SrTiO3

  • Published:2017-06-26 Issue:26 Volume:110 Page:261604
  • ISSN:0003-6951
  • Container-title:Applied Physics Letters
  • language:en
  • Short-container-title:Appl. Phys. Lett.

Author:

Balal Mohammad1,Sanwlani Shilpa1,Wadehra Neha2,Chakraverty Suvankar2,Sheet Goutam1

Affiliation:

1. Department of Physical Sciences, Indian Institute of Science Education and Research Mohali, Sector 81, S. A. S. Nagar, Manauli 140306, India

2. Institute of Nano Science and Technology, Habitat Centre, Sector - 64, Phase X, Mohali 160062, Punjab, India

Funder

Department of Science and Technology, Ministry of Science and Technology (DST)

Nano Mission Council, Department of Science and Technology

Japan Society for the Promotion of Science (JSPS)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrically Controlled Quantum Transition to an Anomalous Metal in 2D;ACS Applied Electronic Materials;2023-10-13

2. Light-enhanced gating effect at the interface of oxide heterostructure;Journal of Physics D: Applied Physics;2022-03-29

3. Emergent phenomena at interfaces of KTaO3;Bulletin of Materials Science;2021-10-21

4. Persistent photoconductivity at LaVO3–SrTiO3 interface;Solid State Communications;2020-08

5. Nano-electrical domain writing for oxide electronics;Applied Surface Science;2020-04
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