Structural and electrical properties of Pb(Zr,Ti)O3 grown on (0001) GaN using a double PbTiO3∕PbO bridge layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2805220
Reference16 articles.
1. Fabrication and current-voltage characterization of a ferroelectric lead zirconate titanate/AlGaN∕GaN field effect transistor
2. Ferroelectric PZT/AlGaN/GaN field effect transistors
3. Ferroelectric gate for control of transport properties of two-dimensional electron gas at AlGaN∕GaN heterostructures
4. Nonvolatile gate effect in the PZT/AlGaN/GaN heterostructure
5. Microstructure and properties of sol-gel derived Pb(Zr0.3Ti0.7)O3 thin films on GaN/sapphire for nanoelectromechanical systems
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1. Epitaxial growth of full range of compositions of (1 1 1) PbZr1-Ti O3 on GaN;Journal of Crystal Growth;2020-05
2. Interface structures of inclined ZnO thin film on (0 1 1)-MgO substrate with bulk-like optical properties;Applied Surface Science;2020-04
3. Hetero-integration of quasi two-dimensional PbZr0.2Ti0.8O3 on AlGaN/GaN HEMT and non-volatile modulation of two-dimensional electron gas;Applied Physics Letters;2019-11-04
4. Epitaxial integration of 0.7Pb(Mg 1/3 Nb 2/3 )O 3 -0.3PbTiO 3 (111) thin films on GaN (0002) with La 0.5 Sr 0.5 CoO 3 /TiO 2 buffer layers;Materials Letters;2018-04
5. Epitaxial Stress-Free Growth of High Crystallinity Ferroelectric PbZr0.52 Ti0.48 O3 on GaN/AlGaN/Si(111) Substrate;Advanced Materials Interfaces;2017-11-27
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