Epitaxial Stress-Free Growth of High Crystallinity Ferroelectric PbZr0.52 Ti0.48 O3 on GaN/AlGaN/Si(111) Substrate-Reference-Cited by-同舟云学术

Epitaxial Stress-Free Growth of High Crystallinity Ferroelectric PbZr0.52 Ti0.48 O3 on GaN/AlGaN/Si(111) Substrate

Published:2017-11-27 Issue:2 Volume:5 Page:1700921
ISSN:2196-7350
Container-title:Advanced Materials Interfaces
language:en
Short-container-title:Adv. Mater. Interfaces

Author:

Li Lin¹,Liao Zhaoliang¹,Gauquelin Nicolas²,Nguyen Minh Duc¹,Hueting Raymond J. E.¹,Gravesteijn Dirk J.¹,Lobato Ivan²,Houwman Evert P.¹,Lazar Sorin³,Verbeeck Johan²,Koster Gertjan¹,Rijnders Guus¹

Affiliation:

1. MESA+ Institute for Nanotechnology; University of Twente; 7500 AE Enschede The Netherlands

2. Electron Microscopy for Materials Science (EMAT); University of Antwerp; 2020 Antwerp Belgium

3. FEI Company; Achtseweg Noord 5; 5651 GG Eindhoven The Netherlands

Funder

Fonds Wetenschappelijk Onderzoek

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Reference32 articles.

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3. Epitaxial yttria‐stabilized zirconia on hydrogen‐terminated Si by pulsed laser deposition

4. Structure and stability of ultrathin zirconium oxide layers on Si(001)

5. Surfactant-enabled epitaxy through control of growth mode with chemical boundary conditions

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