Effect of dislocation density on thermal boundary conductance across GaSb/GaAs interfaces-Reference-Cited by-同舟云学术

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Effect of dislocation density on thermal boundary conductance across GaSb/GaAs interfaces

Published:2011-04-18 Issue:16 Volume:98 Page:161913
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Hopkins Patrick E.,Duda John C.,Clark Stephen P.,Hains Christopher P.,Rotter Thomas J.,Phinney Leslie M.,Balakrishnan Ganesh

Funder

National Nuclear Security Administration, U.S. Department of Energy

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3581041

Reference32 articles.

1. Nanoscale thermal transport

2. Energy dissipation and transport in nanoscale devices

3. Effects of surface roughness and oxide layer on the thermal boundary conductance at aluminum/silicon interfaces

4. Thermal boundary conductance response to a change in Cr∕Si interfacial properties

5. Influence of Interfacial Mixing on Thermal Boundary Conductance Across a Chromium/Silicon Interface

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