Raman and photoluminescence mapping of InxGa1−xN (x ∼ 0.4) at high pressure: Optical determination of composition and stress-Reference-Cited by-同舟云学术

Raman and photoluminescence mapping of InxGa1−xN (x ∼ 0.4) at high pressure: Optical determination of composition and stress

Published:2014-09 Issue:9 Volume:105 Page:092107
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Gkrana V.¹,Filintoglou K.¹,Arvanitidis J.¹,Christofilos D.²,Bazioti C.¹,Dimitrakopulos G. P.¹,Katsikini M.¹,Ves S.¹^ORCID,Kourouklis G. A.²,Zoumakis N.³,Georgakilas A.⁴,Iliopoulos E.⁴

Affiliation:

1. Physics Department, Aristotle University of Thessaloniki, 54124 Thessaloniki, Greece

2. Chemical Engineering Department, Aristotle University of Thessaloniki, 54124 Thessaloniki, Greece

3. Department of Food Technology, The Alexander Technological Educational Institute of Thessaloniki, 57400 Sindos, Greece

4. Department of Physics, Microelectronics Research Group, University of Crete and IESL, FORTH, 71110 Heraklion, Greece

Funder

European Union (European Social Fund - ESF) and Greek national funds through the Operational Program

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4895023

Reference29 articles.

1. Next Generation of Photovoltaics

2. III-Nitride Semiconductors and their Modern Devices

3. Limitations to band gap tuning in nitride semiconductor alloys

4. Preface

5. Bowing of the band gap pressure coefficient in InxGa1−xN alloys

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