Van der Waals bonding of GaAs on Pd leads to a permanent, solid‐phase‐topotaxial, metallurgical bond
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105771
Reference13 articles.
1. Dislocation reduction in epitaxial GaAs on Si(100)
2. Optical‐Contact Bonding
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4. Bonding by atomic rearrangement of InP/InGaAsP 1.5 μm wavelength lasers on GaAs substrates
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