Inversion gate capacitance of undoped single-gate and double-gate field-effect transistor geometries in the extreme quantum limit
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4907950
Reference15 articles.
1. Properties of Semiconductor Surface Inversion Layers in the Electric Quantum Limit
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3. Experimental Verification of the Surface Quantization of ann-Type Inversion Layer of Silicon at 300 and 77°K
4. Determination of the inversion-layer thickness from capacitance measurements of metal-oxide-semiconductor field-effect transistors with ultrathin oxide layers
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