Effects of rapid thermal annealing on quality of In0.52Al0.48As∕In0.53Ga0.47As multiquantum wells grown on a compositionally graded InAlAs∕InAlGaAs metamorphic buffer layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1833566
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Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Observation of V-shaped defects in the growth of In0.8Al0.2Sb/InSb layers: Temperature and V/III flux ratio dependences;Journal of Crystal Growth;2006-10
2. Molecular beam epitaxy growth of In0.52Al0.48As∕In0.53Ga0.47As metamorphic high electron mobility transistor employing growth interruption and in situ rapid thermal annealing;Applied Physics Letters;2006-03-27
3. Effects of postgrowth rapid thermal annealing on InAlAs∕InGaAs metamorphic high-electron-mobility transistor grown on a compositionally graded InAlAs∕InGaAlAs buffer;Applied Physics Letters;2005-07-25
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