Observation of V-shaped defects in the growth of In0.8Al0.2Sb/InSb layers: Temperature and V/III flux ratio dependences
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference32 articles.
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4. Analytic determination of the dielectric function of InSb at energies from 0.74 to 6.42 eV at temperatures from 31 to 675 K;Journal of the Korean Physical Society;2014-06
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