High-performance Ta2O5-based resistive random-access memory with embedded graphene quantum dots and Pt–Ag composite active layer

Abstract

Resistive random-access memory (RRAM) has garnered significant interest in developing nonvolatile memory systems due to its ability to provide external field tunable resistive states with fast speed and low power consumption. This tunable resistive state primarily results from the formation and breakage of conductive pathways triggered by active ion migration. However, due to the stochastic nature of ion migration, the stability of the switching process is a long-standing bottleneck. Here, we investigate the impact of device kinetic parameters on the stability of resistive switching behavior and propose a high-performance RRAM with a Pt–Ag/Ta2O5/GQDs/Pt structure. Incorporating quantum dots can regulate the direction of Ag ion migration, while the Pt–Ag composite electrode can manipulate the oxidation rate of Ag atoms. Compared to the Ag/Ta2O5/GQDs/Pt device, the Pt–Ag/Ta2O5/GQDs/Pt device exhibited a 15-fold reduction in operating voltage, a 10-fold increase in on/off ratio, and superior endurance and uniformity. These findings demonstrate that tuning kinetic parameters has the potential to enhance resistive switching performance, which offers an effective pathway for designing high-performance memory systems.