An electronic silicon-based memristor with a high switching uniformity
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Instrumentation,Electronic, Optical and Magnetic Materials
Link
http://www.nature.com/articles/s41928-019-0204-7.pdf
Reference42 articles.
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3. Kim, K. M., Jeong, D. S. & Hwang, C. S. Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook. Nanotechnology 22, 254002 (2011).
4. Wong, H.-S. P. et al. Metal–oxide RRAM. Proc. IEEE 100, 1951–1970 (2012).
5. Yang, J. J., Strukov, D. B. & Stewart, D. R. Memristive devices for computing. Nat. Nanotechnol. 8, 13–24 (2013).
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