Postdeposition thermal annealing and material stability of 75 °C hydrogenated nanocrystalline silicon plasma-enhanced chemical vapor deposition films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1993777
Reference29 articles.
1. Characteristics of amorphous and polycrystalline silicon films deposited at 120 °C by electron cyclotron resonance plasma-enhanced chemical vapor deposition
2. Hole and electron field-effect mobilities in nanocrystalline silicon deposited at 150 °C
3. Highly conductive n[sup +] hydrogenated microcrystalline silicon and its application in thin film transistors
4. Complete microcrystallinep‐i‐nsolar cell—Crystalline or amorphous cell behavior?
5. Stable microcrystalline silicon thin-film transistors produced by the layer-by-layer technique
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2. Influence of annealing on microstructure and piezoresistive properties of boron-doped hydrogenated nanocrystalline silicon thin films prepared by PECVD;Journal of Materials Science: Materials in Electronics;2015-05-19
3. Restricted Epitaxial Growth of Crystallites in Hydrogenated Nanocrystalline Silicon During Thermal Crystallization Experiments;Journal of Nanoscience and Nanotechnology;2009-06-01
4. High hole and electron mobilities in nanocrystalline silicon thin-film transistors;Journal of Non-Crystalline Solids;2006-06
5. High-performance n-channel 13.56MHz plasma-enhanced chemical vapor deposition nanocrystalline silicon thin-film transistors;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2006-05
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