Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.372154
Reference57 articles.
1. Ion implantation doping and isolation of GaN
2. High-Power GaN P-N Junction Blue-Light-Emitting Diodes
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4. Nitride-based semiconductors for blue and green light-emitting devices
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