Collection of electron‐beam‐generated carriers in the presence of a grain boundary or an epitaxial interface
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.338087
Reference24 articles.
1. Determination of diffusion length of electron beam induced minority carriers in polycrystalline GaAs
2. Characterization of process‐induced defects and device properties of ion beam sputter‐deposited Mo contacts on Si
3. Scanning Electron Microscope Characterization of GaP Red‐Emitting Diodes
4. Application of scanning electron microscopy to determination of surface recombination velocity: GaAs
5. Determination of minority-carrier lifetime and surface recombination velocity with high spacial resolution
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Polycrystalline GaAs Made by Selective Deposition and Its Optical Properties;Japanese Journal of Applied Physics;1992-12-01
2. Calculation of the electron-beam-induced current (EBIC) at a Schottky contact and comparison with Au/n-Ge diodes;Philosophical Magazine B;1989-02
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