High‐temperature operation (to 180 °C) of 0.98 μm strained single quantum well In0.2Ga0.8As/GaAs lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105191
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4. InGaAs/AlGaAs strained single quantum well diode lasers with extremely low threshold current density and high efficiency
5. Submilliampere threshold current pseudomorphic InGaAs/AlGaAs buried‐heterostructure quantum well lasers grown by molecular beam epitaxy
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