Growth of analog AlxGa1−xAs/GaAs parabolic quantum wells by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108819
Reference11 articles.
1. Quantum Hall effect in wide parabolic GaAs/AlxGa1−xAs wells
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3. Technology and electronic properties of PHEMT AlGaAs/In y(z)Ga1 − y(z)As/GaAs compositionally graded quantum wells;Semiconductors;2014-08-31
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