Technology and electronic properties of PHEMT AlGaAs/In y(z)Ga1 − y(z)As/GaAs compositionally graded quantum wells-Reference-Cited by-同舟云学术

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Technology and electronic properties of PHEMT AlGaAs/In y(z)Ga1 − y(z)As/GaAs compositionally graded quantum wells

Published:2014-08-31 Issue:9 Volume:48 Page:1226-1232
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Vasil’evskii I. S.,Vinichenko A. N.,Grekhov M. M.,Gladkov V. P.,Kargin N. I.,Strikhanov M. N.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782614090255.pdf

Reference10 articles.

1. S. Sen, F. Capasso, A. C. Gossard, R. A. Spah, A. L. Hutchinson, and S. N. G. Chu, Appl. Phys. Lett. 51, 1428 (1987).

2. Y. R. Lee, A. K. Ramdas, A. L. Moretti, F. A. Chambers, G. P. Devane, and L. R. Ram-Mohan, Phys. Rev. B 41, 8380 (1990).

3. R. F. Kopf, M. H. Herman, M. Lamont Schnoes, A. P. Perley, G. Livescu, and M. Ohring, J. Appl. Phys. 71, 5004 (1992).

4. S. M. Wang, G. Treideris, W. Q. Chen, and T. G. Andersson, Appl. Phys. Lett. 62, 61 (1993).

5. J.-C. Huang, W.-C. Hsu, C.-S. Lee, D.-H. Huang, and M.-F. Huang, Semicond. Sci. Technol. 21, 619 (2006).

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