Electrical characteristics and interface structure of HfAlO∕SiON∕Si(001) stacks
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2715112
Reference16 articles.
1. High-? Gate Dielectrics
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3. Change in the chemical state and thermal stability of HfO2 by the incorporation of Al2O3
4. Compositional stability of hafnium aluminates thin films deposited on Si by atomic layer deposition
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