Change in the chemical state and thermal stability of HfO2 by the incorporation of Al2O3
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1633976
Reference12 articles.
1. Reduction of the interfacial Si displacement of ultrathin SiO2 on Si(100) formed by atmospheric-pressure ozone
2. Characterization of SiO2/Si(100) interface structure of ultrathin SiO2films using spatially resolved electron energy loss spectroscopy
3. Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al2O3 using atomic layer deposition
4. Microscopic model for enhanced dielectric constants in low concentration SiO2-rich noncrystalline Zr and Hf silicate alloys
5. Tailoring the dielectric properties of HfO2–Ta2O5 nanolaminates
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