Reduction of the interfacial Si displacement of ultrathin SiO2 on Si(100) formed by atmospheric-pressure ozone
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.125798
Reference10 articles.
1. X-Ray Photoelectron Spectroscopy (XPS) Analysis of Oxide Formation on Silicon with High-Purity Ozone
2. Comparison of initial oxidation of Si(111)7×7 with ozone and oxygen investigated by second harmonic generation
3. Ultrathin Silicon Dioxide Formation By Ozone On Ultraflat Si Surface
4. Ultrathin silicon oxide film on Si(100) fabricated by highly concentrated ozone at atmospheric pressure
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