Out-diffusion of deep donors in nitrogen-doped silicon and the diffusivity of vacancies
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4731796
Reference15 articles.
1. Multiplicity of Nitrogen Species in Silicon: The Impact on Vacancy Trapping
2. Deep Level Generation-Annihilation in Nitrogen Doped FZ Crystals
3. Nitrogen Diffusion and Interaction with Oxygen in Si
4. Nitrogen in Crystalline Si
5. Deep-level nitrogen centers in laser-annealed ion-implanted silicon
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1. Deep Levels and Electron Paramagnetic Resonance Parameters of Substitutional Nitrogen in Silicon from First Principles;Nanomaterials;2023-07-21
2. Nucleation of Nickel Disilicide Precipitates in Float‐Zone Silicon: The Role of Vacancies;physica status solidi (a);2022-07-14
3. Passivation of thermally-induced defects with hydrogen in float-zone silicon;Journal of Physics D: Applied Physics;2021-04-29
4. Kinetics of Bulk Lifetime Degradation in Float‐Zone Silicon: Fast Activation and Annihilation of Grown‐In Defects and the Role of Hydrogen versus Light;physica status solidi (a);2020-08-06
5. Infrared study of defects in nitrogen-doped electron irradiated silicon;Journal of Materials Science: Materials in Electronics;2015-11-04
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