Epitaxial fabrication and memory effect of ferroelectric LiNbO3 film/AlGaN/GaN heterostructure
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3272108
Reference20 articles.
1. Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy
2. Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor
3. High frequency and low frequency noise of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors with gate insulator grown using photoelectrochemical oxidation method
4. High-performance AlGaN∕GaN lateral field-effect rectifiers compatible with high electron mobility transistors
5. Influence of Ferroelectric Polarization on the Properties of Two-Dimensional Electron Gas in Pb(Zr0.53Ti0.47)O3/AlxGa1-xN/GaN Structures
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1. First-principles study of size effects on electrical properties of AlN/GaN heterostructured nanofilms;Computational Materials Science;2023-04
2. Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT;Applied Physics Letters;2023-02-27
3. Heteroepitaxy of Hf0.5Zr0.5O2 ferroelectric gate layer on AlGaN/GaN towards normally-off HEMTs;Applied Surface Science;2022-09
4. Strong interfacial coupling effects of ferroelectric polarization with two-dimensional electron gas in BaTiO3/MgO/AlGaN/GaN/Si heterostructures;Journal of Materials Chemistry C;2019
5. Epitaxial growth of perovskite (111) 0.65PMN-0.35PT films directly on wurtzite GaN (0002) surface;Applied Physics A;2018-06-13
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