Time‐resolved reflectivity measurements of temperature distributions during swept‐line electron‐beam heating of silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.350287
Reference25 articles.
1. Microsecond time‐scale Si regrowth using a line‐source electron beam
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4. High speed scanning electron beam annealing of ion-implanted silicon layers
5. Theoretical and experimental study of swept line electron beam annealing of semiconductors
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