Determination of the composition of strained InGaAsP layers on InP substrates using photoreflectance and double‐crystal x‐ray diffractometry
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.349452
Reference24 articles.
1. Growth and Characterization of Liquid‐Phase Epitaxial InAs1−xPx
2. Phase diagram, crystal growth, and band structure of InxGa1-xAs
3. Exciton absorption, photoluminescence and band structure of N-Free and N-DOPED In1−xGaxP
4. Electroreflectance in the GaAs-GaP Alloys
5. Bandgap and lattice constant of GaInAsP as a function of alloy composition
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