Kinetics of silicon stacking fault growth/shrinkage in an oxidizing ambient containing a chlorine compound
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.331312
Reference31 articles.
1. Surface Damage and Copper Precipitation in Silicon
2. Diffraction contrast analysis of two-dimensional defects present in silicon after annealing
3. Growth of Lattice Defects in Silicon during Oxidation
4. Oxidation, defects and vacancy diffusion in silicon
Cited by 32 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Computer Simulation for Morphology, Size, and Density of Oxide Precipitates in CZ Silicon;Journal of The Electrochemical Society;2003
2. Oxygen partial pressure dependence of suppressing oxidation-induced stacking fault generation in argon ambient annealing including oxygen and HCl;Applied Surface Science;2001-08
3. Impurity Gettering;Encyclopedia of Materials: Science and Technology;2001
4. Generation of Point and Extended Defects During Oxidation and Silicidation of Silicon;Encyclopedia of Materials: Science and Technology;2001
5. Nucleation, growth and retrogrowth of oxidation induced stacking faults in thin silicon-on-insulator;Journal of Electronic Materials;1999-01
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3