Time‐resolved ellipsometry measurements of the optical properties of silicon during pulsed excimer laser irradiation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96014
Reference10 articles.
1. Time‐resolved reflectivity of ion‐implanted silicon during laser annealing
2. Time-resolved optical studies of silicon during nanosecond pulsed-laser irradiation
3. Pulsed neodymium: yttrium aluminum garnet laser (532 nm) melting of crystalline silicon: Experiment and theory
4. Macroscopic theory of pulsed-laser annealing. I. Thermal transport and melting
5. Optical constants for silicon at 300 and 10 K determined from 1.64 to 4.73 eV by ellipsometry
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