Study of recrystallization and activation processes in thin and highly doped silicon-on-insulator layers by nanosecond laser thermal annealing-Reference-Cited by-同舟云学术

Study of recrystallization and activation processes in thin and highly doped silicon-on-insulator layers by nanosecond laser thermal annealing

Published:2022-02-14 Issue:6 Volume:131 Page:065301
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Chery N.¹^ORCID,Zhang M.¹,Monflier R.²,Mallet N.²,Seine G.¹,Paillard V.¹^ORCID,Poumirol J. M.¹,Larrieu G.²,Royet A. S.³,Kerdilès S.³,Acosta-Alba P.³^ORCID,Perego M.⁴^ORCID,Bonafos C.¹,Cristiano F.²

Affiliation:

1. CEMES, CNRS and Université de Toulouse, 29 rue Jeanne Marvig, 31055 Toulouse, France

2. LAAS, CNRS and Université de Toulouse, 7 av. du Colonel Roche, 31400 Toulouse, France

3. Université Grenoble-Alpes, CEA-LETI, 17 Avenue des Martyrs, 38054 Grenoble, France

4. MM-CNR, Unit of Agrate Brianza, Via C. Olivetti 2, I-20864 Agrate Brianza, Italy

Funder

Agence Nationale de la Recherche

European Union's Horizon 2020 research and innovation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0073827

Reference44 articles.

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2. Doping of semiconductor devices by Laser Thermal Annealing

3. M. Hackenberg, K. Huet, R. Negru, J. Venturini, G. Fisicaro, A. La Magna, and P. Pichler, Modeling Boron Profiles in Silicon After Pulsed Excimer Laser Annealing (Valladolid, Spain, 2012), pp. 241–244.

4. Micro-spectroscopy on silicon wafers and solar cells

5. Laser annealing of silicon

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