Atomic diffusion in laser irradiated Ge rich GeSbTe thin films for phase change memory applications
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://iopscience.iop.org/article/10.1088/1361-6463/aab1d0/pdf
Reference28 articles.
1. Phase change memory technology
2. Phase-change characteristics of nitrogen-doped Ge2Sb2Te5 films during annealing process
3. Electrical Switching Characteristics of Nitrogen Doped Ge2Sb2Te5 Based Phase Change Random Access Memory Cell
4. Effects of dopants on the amorphous-to-fcc transition in Ge2Sb2Te5 thin films
5. Study of Oxygen-Doped GeSbTe Film and Its Effect as an Interface Layer on the Recording Properties in the Blue Wavelength
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1. A comparison of Ge, Sb and Te thermal diffusion through Ge2Sb2Te5;Materials Science in Semiconductor Processing;2023-09
2. Understanding crystallization in undoped and nitrogen doped GeTe thin films using substrate curvature measurements;Materialia;2023-05
3. An experimental study of Ge diffusion through Ge2Sb2Te5;Materials Science in Semiconductor Processing;2022-12
4. Phase Separation in Ge-Rich GeSbTe at Different Length Scales: Melt-Quenched Bulk versus Annealed Thin Films;Nanomaterials;2022-05-18
5. The effect of Ge content on structural evolution of Ge-rich GeSbTe alloys at increasing temperature;Materialia;2022-03
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