Identification of the donor and acceptor states of the bond-centered hydrogen–carbon pair in Si and diluted SiGe alloys-Reference-Cited by-同舟云学术

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Identification of the donor and acceptor states of the bond-centered hydrogen–carbon pair in Si and diluted SiGe alloys

Published:2020-01-31 Issue:4 Volume:127 Page:045701
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Stübner R.¹,Kolkovsky Vl.¹,Weber J.¹^ORCID,Abrosimov N. V.²,Stanley C. M.³^ORCID,Backlund D. J.⁴,Estreicher S. K.⁵^ORCID

Affiliation:

1. Technische Universität Dresden, 01062 Dresden, Germany

2. Leibnitz-Insitute for Crystal Growth, 12489 Berlin, Germany

3. RB Annis School of Engineering, University of Indianapolis, Indianapolis, Indiana 46227, USA

4. Simulation IT, Texas Tech Health Sciences Center, Lubbock Texas 79430-8317, USA

5. Physics Department, Texas Tech University, Lubbock Texas 79409-1051, USA

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5135757

Reference40 articles.

1. Carbon in silicon: Properties and impact on devices

2. Charge-state-dependent hydrogen-carbon-related deep donor in crystalline silicon

3. Anomalous Electronic Properties of a Hydrogen-Related Deep Donor inc−Si

4. Deep center related to hydrogen and carbon inp‐type silicon

5. Weakly bound carbon-hydrogen complex in silicon

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Interactions of hydrogen atoms with boron and gallium in silicon crystals co-doped with phosphorus and acceptors;Solar Energy Materials and Solar Cells;2023-08

2. Fe‐Related Defects in Si: Laplace Deep‐Level Transient Spectroscopy Studies;physica status solidi (a);2022-05-26

3. Electronic Properties and Structure of Boron–Hydrogen Complexes in Crystalline Silicon;Solar RRL;2021-09-17

4. Defects in Semiconductors;Journal of Applied Physics;2020-05-21

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