Fe‐Related Defects in Si: Laplace Deep‐Level Transient Spectroscopy Studies-Reference-Cited by-同舟云学术

Fe‐Related Defects in Si: Laplace Deep‐Level Transient Spectroscopy Studies

Published:2022-05-26 Issue:17 Volume:219 Page:2200139
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Physica Status Solidi (a)

Author:

Gwozdz Katarzyna¹,Kolkovsky Vladimir²^ORCID

Affiliation:

1. Department of Quantum Technologies Faculty of Fundamental Problems of Technology Wroclaw University of Science and Technology Wybrzeze Wyspianskiego 27 50-370 Wroclaw Poland

2. Fraunhofer IPMS EMT Maria-Reiche Str. 2 01109 Dresden Germany

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202200139

Reference32 articles.

1. Iron and its complexes in silicon

2. Interstitial Fe in Si and its interactions with hydrogen and shallow dopants

3. Two FeH pairs inn-type Si and their implications: A theoretical study

4. First-principles calculations of iron-hydrogen reactions in silicon

5. Deep level, quenched-in defects in silicon doped with gold, silver, iron, copper or nickel

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