The growth of high‐quality AlGaAs by metalorganic molecular‐beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.349608
Reference20 articles.
1. Preparation of GaAs and Ga1-xAlxAs Multi-Layer Structures by Metalorganic Molecular Beam Epitaxy
2. A comparative study of Ga(CH3)3 and Ga(C2H5)3 in the mombe of GaAs
3. Carbon incorporation in AlGaAs grown by CBE
4. Substrate Temperature Dependence of Carbon Incorporation into GaAs Grown by MBE Using Triethylgallium and As4
5. CBE growth of AlGaAs/GaAs heterostructures and their device applications
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1. Effect of spontaneous superlattice ordering on the luminescence properties of the MOVPE grown AlGaAs/GaAs (100) heterostructure;Optical Materials;2024-04
2. Molecular Beam Epitaxy with Gaseous Sources;Handbook of Crystal Growth;2015
3. High quality epitaxial Si grown by a simple low pressure chemical vapor deposition at 550 °C;Applied Physics Letters;1996-09-09
4. Chemical beam epitaxial growth of high optical quality AlGaAs — the influence of precursor purity on material properties;Journal of Crystal Growth;1995-05
5. Vacuum chemical epitaxial growth of GaAs films using dimethylamine gallane;Journal of Crystal Growth;1992-11
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