CBE growth of AlGaAs/GaAs heterostructures and their device applications
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference25 articles.
1. Heterojunction‐induced phenomena in Hall effect and photoconductivity measurements of epitaxial AlxGa1−xAs
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1. Molecular Beam Epitaxy with Gaseous Sources;Handbook of Crystal Growth;2015
2. Kinetics;Organometallic Vapor-Phase Epitaxy;1999
3. Vibrational HREELS study of tris-neopentylgallium adsorbed on GaAs(100); identification of surface species and electron excitation mechanisms;Surface Science;1998-05
4. A novel synthetic route to ether-Free metal alkyl precursors;Journal of Electronic Materials;1996-07
5. Chemical beam epitaxial growth of high optical quality AlGaAs — the influence of precursor purity on material properties;Journal of Crystal Growth;1995-05
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