Influence of microstructure on the resistivity of Al‐Cu‐Si thin‐film interconnects
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.356442
Reference22 articles.
1. Observations of precipitation in thin foils of aluminium +4% copper alloy
2. The influence of Cu precipitation on electromigration failure in Al‐Cu‐Si
3. The mechanism of electromigration failure of narrow Al‐2Cu‐1Si thin‐film interconnects
4. The electrical resistivity during pre-precipitation processes
5. Sur la trempe des lacunes dans un polycristal á grains fins
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1. The distribution of Cu and resultant resistivity change in sputter deposited Al–Cu film as a conductive layer;Thin Solid Films;2003-07
2. Microstructure of pulsed laser deposited YBa2Cu3O7−δ films on yttria-stabilized zirconia/CeO2 buffered biaxially textured Ni substrates;Physica C: Superconductivity;2002-09
3. Catalyzed precipitation in Al-Cu-Si;Metallurgical and Materials Transactions A;2000-11
4. The piezoresistance of aluminum alloy interconnect structures;Journal of Applied Physics;1999-02
5. Comparison of the Electromigration Behavior of Al(MgCu) with Al(Cu) and Al(SiCu);MRS Proceedings;1998
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