Density profiles and electrical properties of thermally grown oxide nanofilms on p-type 6H–SiC(0001)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1829385
Reference14 articles.
1. SiC device technology: remaining issues
2. Electrical properties of thermal oxide grown using dry oxidation onp‐type 6H‐silicon carbide
3. On the presence of aluminum in thermally grown oxides on 6H-silicon carbide [power MOSFETs]
4. Elimination of SiC/SiO2 interface states by preoxidation ultraviolet‐ozone cleaning
5. Effects of wet oxidation/anneal on interface properties of thermally oxidized SiO/sub 2//SiC MOS system and MOSFET's
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