Intrinsically limited mobility of the two-dimensional electron gas in gated AlGaN/GaN and AlGaN/AlN/GaN heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3174441
Reference20 articles.
1. Electron mobility inAlxGa1−xN/GaNheterostructures
2. Mobility of electrons in bulk GaN andAlxGa1−xN/GaNheterostructures
3. Two-dimensional electron mobility limitation mechanisms inAlxGa1−xN∕GaNheterostructures
4. Phonon-scattering-limited electron mobilities inAlxGa1−xAs/GaAs heterojunctions
5. Mobility of two-dimensional electrons in AlGaN/GaN modulation-doped field-effect transistors
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1. Room temperature two-dimensional electron gas scattering time, effective mass, and mobility parameters in AlxGa1−xN/GaN heterostructures (0.07 ≤ x ≤ 0.42);Journal of Applied Physics;2023-11-09
2. Admittance frequency dispersion in lateral AlGaN/GaN Schottky barrier diodes: Other origins of two Gp/ω peaks;Journal of Applied Physics;2023-02-24
3. Scattering Analysis of AlGaN/AlN/GaN Heterostructures with Fe-Doped GaN Buffer;Materials;2022-12-14
4. Study of Drain Access Resistance in Saturation Region of AlGaN/GaN Heterostructure Field-Effect Transistors;IEEE Transactions on Electron Devices;2022-05
5. An ultrathin-barrier AlGaN/GaN heterostructure: a recess-free technology for the fabrication and integration of GaN-based power devices and power-driven circuits;Semiconductor Science and Technology;2021-03-22
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