Electrical properties ofp-ZnTe/n+-GaAs junctions grown at different Te/Zn beam equivalent pressure ratios by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4968173
Reference34 articles.
1. Spintronics: A Spin-Based Electronics Vision for the Future
2. Catalytic growth of ZnTe nanowires by molecular beam epitaxy: structural studies
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