Electrical contacts to p-ZnTe
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Heavily dopedp‐ZnSe:N grown by molecular beam epitaxy
2. p‐type ZnSe by nitrogen atom beam doping during molecular beam epitaxial growth
3. Influence of metal interlayers on Schottky barrier formation for Au/ZnSe (100) and Al/ZnSe (100)
4. Au and Ag electrical contacts to p-ZnSe
5. Improved ohmic contacts forp‐type ZnSe and relatedp‐on‐ndiode structures
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1. Electrical properties ofp-ZnTe/n+-GaAs junctions grown at different Te/Zn beam equivalent pressure ratios by molecular beam epitaxy;Journal of Applied Physics;2016-11-28
2. Band gap modulation of ZnTe1-xOx alloy film by control of oxygen gas flow rate during reactive magnetron sputtering;Applied Physics Letters;2013-12-23
3. Characterization of zinc telluride thin films deposited by two-source technique and post-annealed in nitrogen ambient;Journal of Crystal Growth;2011-02
4. Properties of Ag doped ZnTe thin films by an ion exchange process;Applied Surface Science;2002-05
5. Ohmic Contacts to II–VI and III–V Compound Semiconductors;Processing of Wide Band Gap Semiconductors;2000
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