Optoelectronic properties of undoped and N-doped ZnTe films grown by RF sputtering: Effect of the substrate temperature and N nominal concentration-Reference-Cited by-同舟云学术

Optoelectronic properties of undoped and N-doped ZnTe films grown by RF sputtering: Effect of the substrate temperature and N nominal concentration

Published:2023-10 Issue: Volume:296 Page:116695
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Vázquez-Barragán N.E.,Olvera-Rivas R.,Marasamy Latha^ORCID,Quiñones-Galván J.G.^ORCID,Santos-Cruz J.,Guillen-Cervantes A.,Contreras-Puente G.,de Moure-Flores F.

Funder

Universidad Autonoma de Queretaro

Department of Physics, Harvard University

Consejo Nacional de Ciencia y Tecnología

Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

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4. Structural properties of Sn-doped CdTe thin films grown by pulsed laser deposition using powder as target;Quiñones-Galván;J. Laser Appl.,2016

5. Development of ZnTe as a back contact material for thin film cadmium telluride solar cells;Uličná;Vacuum,2017

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3. Effect of the CdTe absorber layer’s thickness synthesized by the RF sputtering on the performance of CdTe photovoltaic windows;2023 20th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE);2023-10-25