Hole transport and photoluminescence in Mg-doped InN-Reference-Cited by-同舟云学术

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Hole transport and photoluminescence in Mg-doped InN

Published:2010-06 Issue:11 Volume:107 Page:113712
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Miller N.,Ager J. W.,Smith H. M.,Mayer M. A.,Yu K. M.,Haller E. E.,Walukiewicz W.,Schaff W. J.,Gallinat C.,Koblmüller G.,Speck J. S.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3427564

Reference63 articles.

1. Influence of strain on the band gap energy of wurtzite InN

2. Superior radiation resistance of In1−xGaxN alloys: Full-solar-spectrum photovoltaic material system

3. Surface charge accumulation of InN films grown by molecular-beam epitaxy

4. Intrinsic Electron Accumulation at Clean InN Surfaces

5. Fermi-level stabilization energy in group III nitrides

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