Efficient Acceptor Doping of Sputter-Deposited p-Type NixGa1–xO Rocksalt Alloy with Li-Reference-Cited by-同舟云学术

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Efficient Acceptor Doping of Sputter-Deposited p-Type Ni_xGa_1–xO Rocksalt Alloy with Li

Published:2023-07-06 Issue:28 Volume:127 Page:13996-14004
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Ezeh Chioma Vivian¹²^ORCID,Egbo Kingsley O.¹^ORCID,Yu Kin Man¹³^ORCID

Affiliation:

1. Department of Physics, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong

2. Department of Physics, Federal University Oye Ekiti (FUOYE), Km 3 Oye Afao road, Oye Ekiti State, Nigeria

3. Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong

Funder

Research Grants Council, University Grants Committee

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.3c03186

Reference69 articles.

1. Fast Switching $\beta$ -Ga2O3 Power MOSFET With a Trench-Gate Structure

2. Editors' Choice Communication—A (001) β-Ga2O3MOSFET with +2.9 V Threshold Voltage and HfO2Gate Dielectric

3. The road ahead for ultrawide bandgap solar-blind UV photodetectors

4. Review of gallium-oxide-based solar-blind ultraviolet photodetectors

5. Enhanced performance of solar-blind ultraviolet photodetector based on Mg-doped amorphous gallium oxide film

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