In situ photoluminescence study of plasma-induced damage at the a-Si:H/c-Si interface-Reference-Cited by-同舟云学术

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In situ photoluminescence study of plasma-induced damage at the a-Si:H/c-Si interface

Published:2016-02 Issue:5 Volume:108 Page:051603
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lebreton F.¹²³^ORCID,Abolmasov S. N.¹⁴,Silva F.¹³,Roca i Cabarrocas P.¹³

Affiliation:

1. LPICM, CNRS, Ecole Polytechnique, Université Paris-Saclay, 91128 Palaiseau, France

2. Total MS–Energie Nouvelles-24 cours Michelet, La Défense 10, 92069 Paris la Défense Cedex, France

3. Institut Photovoltaïque d'Ile-de-France (IPVF), 8 rue de la renaissance, 92160 Antony, France

4. R&D Center of Thin Film Technologies in Energetics, Ioffe Institute, 194054 Saint Petersburg, Russia

Funder

IPVF

Agence Nationale de la Recherche (ANR)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4941298

Reference22 articles.

1. Excellent crystalline silicon surface passivation by amorphous silicon irrespective of the technique used for chemical vapor deposition

2. Future directions for higher-efficiency HIT solar cells using a Thin Silicon Wafer

3. 24.7% Record Efficiency HIT Solar Cell on Thin Silicon Wafer

4. Effect of ion bombardment on the a-Si:H based surface passivation of c-Si surfaces

5. Interface defects in a-Si:H/c-Si heterojunction solar cells

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