Interface defects in a-Si:H/c-Si heterojunction solar cells-Reference-Cited by-同舟云学术

Interface defects in a-Si:H/c-Si heterojunction solar cells

Published:2015-12 Issue: Volume:365 Page:133-136
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Defresne A.,Plantevin O.,Sobkowicz I.P.,Bourçois J.,Roca i Cabarrocas P.

Funder

MIPEGE

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference16 articles.

1. Development status of high-efficiency HIT solar cells

2. K. Masuko, M. Shigematsu, T. Hashiguchi, D. Fujishima, M. Kai, N. Yoshimura, T. Yamaguchi, Y. Ichihashi, T. Yamanishi, T. Takahama, M. Taguchi, E. Maruyama, and S. Okamoto, presented at the 40th IEEE Photovoltaic Specialists Conference, Denver, Colorado, USA, 2014.

3. Effect of ion bombardment on the a-Si:H based surface passivation of c-Si surfaces

4. Damage at hydrogenated amorphous/crystalline silicon interfaces by indium tin oxide overlayer sputtering

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