p-Type a-Si:H Doping Using Plasma Immersion Ion Implantation for Silicon Heterojunction Solar Cell Application-Reference-Cited by-同舟云学术

p-Type a-Si:H Doping Using Plasma Immersion Ion Implantation for Silicon Heterojunction Solar Cell Application

Published:2017-02 Issue:2 Volume:1 Page:1600007
ISSN:2367-198X
Container-title:Solar RRL
language:en
Short-container-title:Sol. RRL

Author:

Carrere Tristan¹²³,Muñoz Delfina¹,Coig Marianne⁴,Longeaud Christophe²,Kleider Jean-Paul²

Affiliation:

1. CEA-INES, LITEN, Laboratoire HET; 50 Avenue du Lac Léman F-73375 Le Bourget-du-Lac France

2. GeePs, UMR8507 CNRS, CentraleSupélec; Université Paris-Sud, Université Paris-Saclay; Sorbonne Universités UPMC Univ Paris 6, 11 rue Joliot Curie F-91192 Gif-sur-Yvette Cedex France

3. French Environment and Energy Management Agency; 20 Avenue du Grésillé BP 90406 F-49004 Angers Cedex 01 France

4. CEA-LETI, MINATEC Campus; 17 rue des Martyrs F-38054 Grenoble France

Funder

French Environment and Energy Management Agency (ADEME)

French Alternative Energies and Atomic Energy Commission

European Union

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Energy Engineering and Power Technology,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference27 articles.

1. Impact of carrier recombination on fill factor for large area heterojunction crystalline silicon solar cell with 25.1% efficiency

2. Solar cell efficiency tables (version 48)

3. Achievement of More Than 25% Conversion Efficiency With Crystalline Silicon Heterojunction Solar Cell

4. Desrues , T. De Vecchi , S. d'Alonzo , G. Munoz , D. Ribeyron , P.-J. IEEE 40th Photovoltaic Specialists Conference 2014 857

5. Back-Contacted Silicon Heterojunction Solar Cells: Optical-Loss Analysis and Mitigation

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