Atomic microstructure and electronic properties ofa‐SiNx:H deposited by radio frequency glow discharge
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.350352
Reference34 articles.
1. Reactive Plasma Deposited Si‐N Films for MOS‐LSI Passivation
2. The preparation and C-V characteristics of SiSi3N4 and SiSiO2Si3N4 structures
3. Local atomic structure in thin films of silicon nitride and silicon diimide produced by remote plasma-enhanced chemical-vapor deposition
4. Optical Properties of Silicon Nitride
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