Effectiveness of plasma and radical control for the low temperature synthesis and properties of a-SiNx:H films using RF-near microwave PECVD-Reference-Cited by-同舟云学术

Effectiveness of plasma and radical control for the low temperature synthesis and properties of a-SiNx:H films using RF-near microwave PECVD

Published:2018-02 Issue:2 Volume:25 Page:023511
ISSN:1070-664X
Container-title:Physics of Plasmas
language:en
Short-container-title:Physics of Plasmas

Author:

Sahu Bibhuti Bhusan¹,Toyoda Hirotaka²,Han Jeon Geon¹

Affiliation:

1. School of Advanced Materials Science and Engineering, Center for Advanced Plasma Surface Technology (CAPST), NU-SKKU Joint Institute for Plasma Nano Materials, Sungkyunkwan University, Suwon 440-746, South Korea

2. Plasma Nanotechnology Research Center, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

Funder

Ministry of Science, ICT and Future Planning

Publisher

AIP Publishing

Subject

Condensed Matter Physics

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5016618

Reference58 articles.

1. Vapor Deposition of Silicon Nitride Film on Silicon and Properties of MNS Diodes

2. Industrial high-rate (∼5 nm/s) deposited silicon nitride yielding high-quality bulk and surface passivation under optimum anti-reflection coating conditions

3. Passivation of GaAs Power Field-Effect Transistor Using Electron Cyclotron Resonance Chemical Vapor Deposition Silicon Nitride Technique

4. A study of deposition conditions on charging properties of PECVD silicon nitride films for MEMS capacitive switches

5. Carrier trap passivation in multicrystalline Si solar cells by hydrogen from SiNx:H layers

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1. Study of high efficiency, low noise sputtered magnetron's cathode using GaN and SiC semiconductors for modulated microwave power transmission;International Journal of Microwave and Wireless Technologies;2021-04-08

2. Comparison of plasma properties in normal and multiple holes hollow cathode RF PECVD and their utility in a-SiNx:H thin film deposition;Vacuum;2019-02