Proton isolated In0.2Ga0.8As/GaAs strained‐layer superlattice avalanche photodiode
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96621
Reference10 articles.
1. Degeneracy in nonlinear least squares
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3. Isolation of junction devices in GaAs using proton bombardment
4. Proton-bombardment formation of stripe-geometry heterostructure lasers for 300 K CW operation
5. Nonradiative recombination in GaAlAs proton-bombarded stripe-geometry lasers
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1. Rapid-thermal annealing for quantum-well heterostructure device fabrication;IEEE Transactions on Electron Devices;1992
2. Raman scattering from InxGa1−xAs/GaAs strained‐layer superlattices;Applied Physics Letters;1991-04-08
3. A simple high-speed Si Schottky photodiode;IEEE Photonics Technology Letters;1991-04
4. Issues in the realization of strained-layer quantum well optoelectronic devices;Optical and Quantum Electronics;1991
5. Photoluminescence excitation spectroscopy of InxGa1−xAs/GaAs strained-layer coupled double quantum wells;Solid State Communications;1990-03
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