Isolation of junction devices in GaAs using proton bombardment-Reference-Cited by-同舟云学术

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Isolation of junction devices in GaAs using proton bombardment

Published:1969-04 Issue:4 Volume:12 Page:209-214
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Foyt A.G.,Lindley W.T.,Wolfe C.M.,Donnelly J.P.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. Die Änderung von Konzentration und Beweglichkeit der Ladungsträger in GaAs bei Bestrahlung mit Protonen

2. R.G. Hunsperger, O.J. Marsh and C.A. Mead (to be published)

3. Impurity Distribution in Epitaxial Silicon Films

4. Avalanche Effects in Silicon p—n Junctions. II. Structurally Perfect Junctions

5. W.T. Lindley, R.J. Phelan, Jr., C.M. Wolfe and A.G. Foyt (to be published)

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1. Displacement damage effects in proton irradiated vertical-cavity surface-emitting lasers;Japanese Journal of Applied Physics;2021-12-22

2. Light absorption enhancement in Ge nanomembrane and its optoelectronic application;Optics Express;2016-07-18

3. Defect enhanced funneling of diffusion current in silicon;Applied Physics Letters;2013-01-28

4. RADIATION DEFECT ENGINEERING;International Journal of High Speed Electronics and Systems;2005-03

5. Formation of device isolation in GaAs with polyenergetic ion implantation;Vacuum;2001-08

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